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| AP3310H/J Advanced Power Electronics Corp. Simple Drive Requirement 2.5V Gate Drive Capability G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 150m -10A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. This device is suited for low voltage and battery power applications. G D S GD S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating - 20 12 -10 -6.2 -24 25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 5.0 110 Unit /W /W Data and specifications subject to change without notice 201225023 AP3310H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -20 -0.5 -0.1 - V V/ Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A 4.4 6 1.5 0.6 25 60 70 60 300 180 60 150 m 250 m -1 -25 V S uA uA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= 12V ID=-2.8A VDS=-6V VGS=-5V VDS=-6V ID=-1A RG=6,VGS=-5V RD=6 VGS=0V VDS=-6V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V 1 Min. Typ. Max. Units -10 -24 -1.2 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=-10A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP3310H/J 24 20 -4.5V T C =25 C o T C =150 o C -4.5V 18 -4.0V 15 -4.0V -ID , Drain Current (A) -ID , Drain Current (A) -3.5V 12 -3.5V 10 -3.0V -3.0V -2.5V 5 6 -2.5V V GS = -2.0V V GS = -2.0V 0 0.0 2.5 5.0 7.5 10.0 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 800 1.8 I D = -2.8A T C =25 600 I D = -2.8A V GS = -4.5V 1.5 400 Normalized R DS(ON) 0 2 4 6 8 10 RDS(ON) (m ) 1.2 200 0.9 0 0.6 -50 0 50 100 150 -V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP3310H/J 10 30 25 8 -ID , Drain Current (A) 20 6 PD (W) 4 2 0 25 50 75 100 125 150 15 10 5 0 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 Normalized Thermal Response (R thjc) 0.2 100us -ID (A) 0.1 0.1 0.05 10 1ms 0.02 PDM Single Pulse t 0.01 T 10ms T C =25 C Single Pulse 100ms 1 1 10 100 Duty Factor = t/T Peak T j = PDM x Rthjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 -V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP3310H/J f=1.0MHz 5 1000 I D =-2.8A V DS =-6V 4 Ciss -VGS , Gate to Source Voltage (V) 3 Coss C (pF) 100 2 Crss 1 0 0 2 4 6 8 10 1 3 5 7 9 11 13 Q G , Total Gate Charge (nC) -V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 10 1.5 T j =150 o C T j =25 o C 1 1 -VGS(th) (V) 0.5 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 o -IS(A) 0 100 150 -V SD (V) T j , Junction Temperature ( C) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP3310H/J VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.3 x RATED VDS RG G 10% S -5 V VGS VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE 0.3 x RATED VDS G S -1~-3mA I G QG D -5V QGS QGD VGS ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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